Associate Professor of Electrical & Computer Engineering
Ph.D., University of Illinois, 1989
M.S.E.E., University of Illinois, 1981
B.S.E.E., University of Illinois, 1980
B.A., Physics, Augustana College, 1980
From 1981 to 1985, David B. Janes worked as a research scientist at the Research Division of Raytheon Company. At Raytheon, he was involved in research on microwave semiconductor devices, including GaAs IMPATT diodes and MESFETs, and monolithic microwave integrated circuits. His doctoral research focused on the impact of electron traps on the microwave performance of GaAs based signal processing devices (acoustic charge transport devices). Since 1989, he has been at Purdue University, where he is currently an Associate Professor of Electrical and Computer Engineering. He is also the Deputy Director of the Institute for Nanoelectronics and Computing, a NASA-supported center, and Research Program Coordinator for the Birck Nanotechnology Center. Since joining the Purdue University faculty, he has been engaged in experimental studies on mesoscopic devices and compound semiconductor microwave devices and characterization of novel semiconductor heterostructures, including structures incorporating low-temperature grown GaAs. Current projects include development of molecular electronic components, device applications of nanoscale metallic cluster networks, and development of metal/molecule/semiconductor nanostructures.